| PART |
Description |
Maker |
| MJD6036 MJD6036-1 MJD6036T4 MJD6039 MJD6039-1 MJD6 |
SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS 4 A, 80 V, NPN, Si, POWER TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BUT34 |
50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS
|
Motorola Inc
Motorola, Inc.
|
| BU406 BU407 ON0235 |
From old datasheet system
7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| BUS50_D ON0251 BUS50 |
From old datasheet system
70 AMPERES NPN SILICON POWER TRANSISTOR 125 VOLTS (BVCEO) 350 WATTS 200 V (BVCES)
|
功率晶体
ON Semi
Motorola, Inc
|
| 2N5655 2N5656 2N5657 |
Power 1A 350V NPN
POWER TRANSISTORS NPN SILICON
Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| MJE18204 MJF18204 ON2025 |
SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications
From old datasheet system
POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
|
| MJ21195G MJ21195G-13 |
Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON
|
ON Semiconductor
|
